? semiconductor components industries, llc, 2011 november, 2011 ? rev. 1 1 publication order number: nss30201mr6/d nss30201mr6t1g, SNSS30201MR6T1G 30 v, 3 a, low v ce(sat) npn transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical application are dc ? dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these are pb ? free devices* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. device package shipping ? ordering information nss30201mr6t1g tsop ? 6 (pb ? free) tsop ? 6 case 318g style 6 3,000 / tape & reel device marking collector 1, 2, 5, 6 3 base 4 emitter vs7 m vs7 = specific device code m = date code = pb ? free package ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. http://onsemi.com 30 volts 3.0 amps npn low v ce(sat) transistor equivalent r ds(on) 100 m SNSS30201MR6T1G tsop ? 6 (pb ? free) 3,000 / tape & reel (note: microdot may be in either location)
nss30201mr6t1g, SNSS30201MR6T1G http://onsemi.com 2 maximum ratings (t a = 25 ? c) rating symbol max unit collector-emitter voltage v ceo 30 v collector-base voltage v cbo 50 v emitter-base voltage v ebo 5.0 v collector current ? continuous i c 2.0 a collector current ? peak i cm 3.0 a thermal characteristics characteristic symbol max unit total device dissipation t a = 25 ? c derate above 25 ? c p d (note 1) 535 4.3 mw mw/ ? c thermal resistance, junction ? to ? ambient r ja (note 1) 234 ? c/w total device dissipation t a = 25 ? c derate above 25 ? c p d (note 2) 1.180 9.4 w mw/ ? c thermal resistance, junction ? to ? ambient r ja (note 2) 106 ? c/w thermal resistance, junction ? to ? lead #1 r jl (note 1) r jl (note 2) 110 50 ? c/w ? c/w total device dissipation (single pulse < 10 s) p dsingle (notes 2 and 3) 1.75 w junction and storage temperature range t j , t stg ? 55 to +150 ? c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual str ess limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation i s not implied, damage may occur and reliability may be affected. 1. fr ? 4 with 1 oz and 3.9 mm 2 of copper area. 2. fr ? 4 with 1 oz and 645 mm 2 of copper area. 3. refer to figure 8.
nss30201mr6t1g, SNSS30201MR6T1G http://onsemi.com 3 electrical characteristics (t a = 25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 ma, i b = 0) v (br)ceo 30 ? ? v collector ? base breakdown voltage (i c = 0.1 ma, i e = 0) v (br)cbo 50 ? ? v emitter ? base breakdown voltage (i e = 0.1 ma, i c = 0) v (br)ebo 5.0 ? ? v collector cutoff current (v cb = 30 v, i e = 0) i cbo ? ? 0.1 a collector ? emitter cutoff current (v ces = 30 v) i ces ? ? 0.1 a emitter cutoff current (v eb = 4.0 v) i ebo ? 0.1 a on characteristics dc current gain (note 4) (i c = 1.0 ma, v ce = 5.0 v) (i c = 0.5 a, v ce = 5.0 v) (i c = 1.0 a, v ce = 5.0 v) h fe 300 300 200 ? 500 ? ? 900 ? collector ? emitter saturation voltage (note 4) (i c = 1.0 a, i b = 100 ma) (i c = 0.5 a, i b = 50 ma) (i c = 0.1 a, i b = 1.0 ma) v ce(sat) ? ? ? 0.10 0.06 0.05 0.200 0.125 0.075 v base ? emitter saturation voltage (note 4) (i c = 1.0 a, i b = 0.1 a) v be(sat) ? ? 1.1 v base ? emitter turn ? on voltage (note 4) (i c = 1.0 a, v ce = 2.0 v) v be(on) ? ? 1.1 v cutoff frequency (i c = 100 ma, v ce = 5.0 v, f = 100 mhz f t 200 300 ? mhz output capacitance (f = 1.0 mhz) c obo ? ? 15 pf 4. pulsed condition: pulse width ? 300 sec, duty cycle ? 2%.
nss30201mr6t1g, SNSS30201MR6T1G http://onsemi.com 4 figure 1. v ce ( sat ) versus i b 0.001 0.2 0.01 0.1 1.0 0 0.1 v ce(sat) (v) i b (a) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 figure 2. v ce ( sat ) versus i c 0.001 2 0.01 0.1 1.0 0 0.1 v ce(sat) (v) i c (a) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 i c = 2 a i c = 1 a i c = 500 ma i c = 100 ma i c /i b = 100 i c /i b = 10 figure 3. h fe versus i c figure 4. v be(on) versus i c 0.001 2 0.01 0.1 1.2 0 v be(on) (v) i c (a) 0.2 0.4 0.6 0.8 figure 5. v be ( sat ) versus i c 0.001 2 0.01 0.1 1.2 0 v be (sat) (v) i c (a) 0.2 0.4 0.6 0.8 1.0 figure 6. safe operating area i c collector current (a) v ce(sat) (v) 1 1.0 +125 ? c +25 ? c ? 55 ? c v ce = 5 v 1 i c /i b = 100 i c /i b = 10 0.01 0.10 1.00 10.00 0.10 1.00 10.00 100.00 100 ms 10 ms 1 ms single pulse t amb = 25 ? c 1 s dc 3.0 0.001 2 0.01 0.1 800 0 100 h fe i c (a) 200 300 400 500 600 700 1 +125 ? c +25 ? c ? 55 ? c v ce = 5 v
nss30201mr6t1g, SNSS30201MR6T1G http://onsemi.com 5 10 100 1000 1 10 100 1000 figure 7. f t (mhz) versus i c (ma) v ce = 5.0 v ic, collector current (ma) f t , current ? gain bandwidth product (mhz) 0.1 figure 8. normalized thermal response t, time (sec) 1.0 0.001 0.01 0.00001 0.01 0.1 1.0 100 1000 0.1 0.0001 0.001 10 r(t), normalized transient thermal d = 0.5 0.02 0.05 0.2 0.01 single pulse resistance
nss30201mr6t1g, SNSS30201MR6T1G http://onsemi.com 6 package dimensions ? 6 case 318g ? 02 issue u 23 4 5 6 d 1 e b e1 a1 a 0.05 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e1 do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimensions d and e1 are determined at datum h. 5. pin one indicator must be located in the indicated zone. c *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim a min nom max millimeters 0.90 1.00 1.10 a1 0.01 0.06 0.10 b 0.25 0.38 0.50 c 0.10 0.18 0.26 d 2.90 3.00 3.10 e 2.50 2.75 3.00 e 0.85 0.95 1.05 l 0.20 0.40 0.60 0.25 bsc l2 ? 0 ? 1 0 ? 1.30 1.50 1.70 e1 e recommended note 5 l c m h l2 seating plane gauge plane detail z detail z 0.60 6x 3.20 0.95 6x 0.95 pitch dimensions: millimeters m style 6: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nss30201mr6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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